Microwave Schottky diodes based on single GaN nanowires
نویسندگان
چکیده
A series of Schottky diodes based on single GaN nanowires has been fabricated. Based the data small-signal frequency analysis (parameter S 21 ) diode structures at various bias voltages, parameters corresponding equivalent electrical circuit were determined. It is shown that cutoff fabricated reaches 27.5 GHz. Keywords: GaN, nanowires, microwave band, diode.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2022
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2022.08.55053.19229